This sheet starts by calculating from the SPICE values how the VBE voltage for a lateral PNP-transistor diode
(TLEV=2) varies with temperature.The results are then compared to SPICE simulation results and can be seen to be within 4mV under a variety of conditions.
The equations were found in the
ADS
manual for non linear devices.
AgilentHBT_NPN (Agilent Heterojunction Bipolar Transistor, NPN)
http://cp.literature.agilent.com/litweb/pdf/ads2003c/pdf/ccnld.pdf
Then the VBE rersults are used directly in the design of a Bandgap Voltage generator.The Bandgap is based on a paper by
Maloberti
, July 2001.
The aim of this sheet is to design a bandgap generator directly from the diode spice model. These assume TLEV=0